Max Stopyra

GaN FET High-Current Long-term Reliability Test Bench

Conducted in-depth research on various applications of Gallium Nitride (GaN) semiconductor technology, particularly its advantages in power conversion systems. GaN semiconductors have proven to be highly efficient, offering lower conduction and switching losses compared to traditional silicon-based semiconductors, making them ideal for applications requiring high power density and energy efficiency.

I have designed, laid out, and fabricated GaN-based power converters using Allegro software to conduct long-term reliability testing of GaN field-effect transistors (FETs), gate drivers, and controllers on a large high power test setup.

This work aims to validate GaN's long-term reliability and performance in high-stress environments, helping to advance its application in power electronics, including electric vehicles, data centers, and renewable energy systems.